unisonic technologies co., ltd 2sC2688 npn epitaxial silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2005 unisonic technologies co., ltd qw-r204-023,a npn silicon transistor description the utc 2sC2688 is designed for use in color tv chroma output circuits. features * high electrostatic-discharge-resistance. esdr: 1000v typ. (e-b reverse bias, c=2300pf) * low c re , high f t c re 3.0 pf (v cb =30v) f t 50mhz (v ce =30v, i e =-10ma) to-126 1 *pb-free plating product number: 2sC2688l ordering information order number pin assignment normal lead free plating package 1 2 3 packing 2sC2688-x-t60-a-k 2sC2688l-x-t 60-a-k to-126 e c b bulk 2sC2688l-x-t60-a-k (1)packing type (3)package type (4)rank (5)lead plating (2)pin assignment (1) k: bulk (2) refer to pin assignment (3) t60: to-126 (4) x: refer to classification of h fe (5) l: lead free plating, blank: pb/sn
2sC2688 npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r204-023,a absolute maximum rating parameter symbol ratings unit collector to base voltage v cbo 300 v collector to emitter voltage v ceo 300 v emitter to base voltage v ebo 5.0 v collector current i c 200 ma ta=25 1.25 w total power dissipation t c =25 p d 10 w junction temperature t j 150 storage temperature t stg -55 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta=25 ) parameter symbol test conditions min typ max unit collector saturation voltage v ce(sat) i c =20ma, i b =5.0ma 1.5 v collector cutoff current i cbo v cb =200v, i e =0 100 na emitter cutoff current i ebo v eb =5.0v, i c =0 100 na dc current gain h fe v ce =10v, i c =10ma 40 80 250 gain bandwidth product f t v ce =30v, i e =-10ma 50 80 mhz feedback capacitance c re v cb =30v, i e =0, f=1.0mhz 3 pf note 1. * pulsed pw 350s, duty cycle 2% classification of h fe rank n m l k range 40 ~ 80 60 ~ 120 100 ~ 200 16 ~ 250
2sC2688 npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r204-023,a burnout test circuit by discharge of capacitor v d c=2 300pf t.u.t open collector sw. test condition 1. e-b reverse bias 2.c=2300pf 3. apply on shot pulse to t.u.t. (transistor under the test) by sw. judgement reject; bv ebo waveform defect as a result if t.u.t. is not rejected, apply higher voltage to capacitor and test again.
2sC2688 npn epitaxial silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r204-023,a typical characteristics (ta=25 ) 0 25 50 75 100 125 150 ambient temperature, ta ( ) 2 4 6 8 10 total power dissipation vs . ambinet temperature total power dissipation, p d (w) 0 25 50 75 100 125 150 ambient temperature, ta ( ) 0.25 0.5 0.75 1.0 1.25 total power dissipation vs. ambinet temperature total power dissipation, p d (w) 175 infinite heat sink free air 1.5 024681012 collector to emitter voltage, v ce (v) 2 4 6 10 12 collector current vs. collector to emitter voltage collector current, i c (ma) 14 14 8 i b =50a 100a 150a 050100150 collector to emitter voltage, v ce (v) 0. 5 1. 0 2. 0 2. 5 collector current vs. collector to emitter voltage collector current, i c (ma) 3. 0 1. 5 i b =10a 30a 20a 00.40.81.2 base to emitter voltage, v be (v) 10 20 50 60 collector current vs. base to emitter voltage collector current, i c (ma) 70 30 v ce =10v 0. 2 0.6 1. 0 1.4 40 0.1 10 100 collector current, i c (ma) 1 5 100 dc current gain vs. collector current dc current gain, h fe 10 0.5 5 50 1000 50 1500 200 v ce =10v
2sC2688 npn epitaxial silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r204-023,a typical characteristics 0.1 10 100 collector current, i c (ma) 0. 01 0. 05 1.0 base and collector saturation voltage vs. collector current base saturation voltage, v be (sat) (v) collector saturation voltage, v ce (sat) (v) 0.1 0.5 5 50 1000 0.5 1500 v ce(sat ) 5.0 10.0 v be (sat) i c =10i b -1 -10 emitter current, i e (ma) 10 200 gain banddwidth product vs. emitter current gain bandwidth product, f t (mhz) 50 -5 -100 100 -50 v ce =30v 110 collector to base voltage, v cb (v) 1 feedback capacitance vs.collector to base voltage feedback capacitance, c re (pf) 5 5100 10 50 i e =0 f=1mhz utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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